job description
Are you a visionary Senior Research Engineer passionate about advancing Silicon Carbide (SiC) crystal growth technologies? Join A*STAR’s Institute of Microelectronics (IME) in a groundbreaking role that places you at the forefront of semiconductor innovation.
As part of our elite SiC crystal growth team, you will lead cutting-edge research, optimize equipment performance, and drive facility enhancements to support next-generation microelectronics. This is a rare opportunity to contribute to high-impact projects in a dynamic, collaborative environment where your expertise will shape the future of power electronics, RF devices, and quantum technologies.
Based in the vibrant hub of Denpasar, Bali, this role offers a unique blend of professional growth and work-life balance in one of the world’s most inspiring locations.
Responsibility
- Lead and execute SiC crystal growth research projects, from conceptualization to implementation, ensuring alignment with industry and academic standards.
- Design, develop, and optimize equipment and processes for high-quality SiC substrate production, including CVD, PVT, or sublimation growth techniques.
- Collaborate with cross-functional teams (materials scientists, process engineers, and technicians) to troubleshoot and enhance facility infrastructure for maximum efficiency and safety.
- Conduct data analysis and characterization of SiC crystals using advanced tools (e.g., XRD, SEM, AFM) to validate growth parameters and material properties.
- Develop and implement standard operating procedures (SOPs) and best practices for equipment maintenance, calibration, and compliance with ISO/cleanroom standards.
- Mentor junior engineers and researchers, fostering a culture of innovation, knowledge-sharing, and continuous improvement.
- Stay abreast of emerging trends in wide-bandgap semiconductors and propose novel solutions to address technical challenges.
- Prepare technical reports, patents, and presentations to communicate findings to stakeholders and at international conferences.
Qualifications
- PhD or Master’s degree in Materials Science, Electrical Engineering, Chemical Engineering, or Physics, with a focus on semiconductor materials or crystal growth.
- Minimum 5+ years of hands-on experience in SiC or III-V compound semiconductor growth (PVT, CVD, or MBE) in a research or industrial setting.
- Proven track record of leading R&D projects from inception to commercialization, with publications or patents in relevant fields.
- Expertise in process optimization, defect analysis, and material characterization techniques (e.g., PL, Raman spectroscopy, Hall measurements).
- Strong proficiency in data analysis tools (Python, MATLAB, LabVIEW) and simulation software (COMSOL, Silvaco).
- Experience with cleanroom operations, safety protocols, and equipment maintenance (e.g., MOCVD, PECVD, RTP systems).
- Excellent problem-solving, communication, and project management skills, with the ability to work in multidisciplinary teams.
- Fluency in English (written and verbal); familiarity with Indonesian (Bahasa) is a plus.