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Engineering 🏢 Full Time ⭐️ Terverifikasi

Research Fellow (Physical Sciences/Engineering) - AI & MRAM Technology

Nanyang Technological University
Singapore
Salary Estimate
SGD 6.000 – SGD 8.000
Newest
Live Update
5 Agustus 2026
Deadline
5 Agu 2027

job description

Join Nanyang Technological University (NTU) as a Research Fellow in the School of Physical and Mathematical Sciences (SPMS) and contribute to groundbreaking research in Magnetoresistive Random-Access Memory (MRAM) technology for AI applications. This is a unique opportunity to work in a dynamic, interdisciplinary team at one of Asia's leading research institutions.

As a Research Fellow, you will play a key role in advancing next-generation memory solutions that power AI systems. You will collaborate with world-class scientists, engineers, and industry partners to develop innovative MRAM technologies that enhance computational efficiency and energy savings.

NTU offers a vibrant research environment with state-of-the-art facilities, competitive compensation, and opportunities for professional growth. If you are passionate about cutting-edge technology and want to make an impact in the field of AI hardware, we invite you to apply.

Responsibility

  • Conduct advanced research in MRAM technology, focusing on materials, device fabrication, and characterization.
  • Develop and optimize MRAM-based memory solutions for AI and machine learning applications.
  • Collaborate with cross-functional teams, including physicists, engineers, and data scientists.
  • Design and execute experiments to evaluate MRAM performance, reliability, and scalability.
  • Publish research findings in high-impact journals and present at international conferences.
  • Mentor junior researchers and graduate students in the lab.
  • Work closely with industry partners to translate research into real-world applications.
  • Stay updated with emerging trends in memory technologies and AI hardware.

Qualifications

  • PhD in Physics, Materials Science, Electrical Engineering, or a related field.
  • Strong background in magnetism, spintronics, or nanofabrication.
  • Experience with MRAM or other emerging memory technologies is highly desirable.
  • Proficient in experimental techniques such as thin-film deposition, lithography, and electrical characterization.
  • Excellent analytical and problem-solving skills with a track record of research publications.
  • Ability to work independently and as part of a collaborative team.
  • Strong communication skills in English (written and verbal).
  • Prior experience in AI hardware or neuromorphic computing is a plus.

Required Skills

MRAM Spintronics Nanofabrication Thin-Film Deposition AI Hardware Materials Science Electrical Characterization Research & Development

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